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FAILURE MECHANISMS IN SEMICONDUCTOR DIODES.
Final rept. 4 Jan 65-2 Mar 68,
GENERAL ELECTRIC CO SYRACUSE NY SEMICONDUCTOR PRODUCTS DEPT
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The program consisted of an investigation of the physical and chemical mechanisms which contribute to long term degradation failures of general purpose silicon planar epitaxial diodes. The objective of this effort was to provide a sounder physical and chemical basis for diode reliability prediction and testing techniques. Emphasis was placed upon the identification of the dominant failure mechanisms in diode materials and processing, determination of their time and stress dependence, and application of this information to failure prediction models, accelerated testing techniques and non-destructive screening techniques. The test vehicle chosen for this program was the Double Heat-sink Diode DHD with the silver contact pellet SD100 or a silicon contact pellet SD110. This diode was manufactured on a high reliability production line which has established process specifications, well controlled processes with a high yield and a continuous reliability monitoring. Author
APPROVED FOR PUBLIC RELEASE