Accession Number:

AD0839081

Title:

SEMICONDUCTOR LASER ARRAYS.

Descriptive Note:

Research and development technical rept.,

Corporate Author:

ARMY ELECTRONICS COMMAND FORT MONMOUTH NJ

Personal Author(s):

• Wandinger, Lothar
• Klohn, Kenneth L.
• Armata, John F., Jr

Report Date:

1968-07-01

Pagination or Media Count:

21.0

Abstract:

Semiconductor laser arrays are shown to offer a means for increasing the optical power available by use of injection lasers. This report discusses various methods of fabricating parallel laser array structures which are electrically in parallel and their characteristics. Arrays have been tested in pulse operation at 77K for their optical power output, threshold current, spectral distribution, linewidth, efficiency and possible interference in the optical output of the laser array. The optical power output of array structures is, aside from inevitable heat losses, the sum of the outputs of the individual diodes. The spectral wavelength was 8404A, and the linewidth for a double array was 8A at the half-power point. Interference patterns were obtained and no mutual interference between the individual diodes was observed. Photoresist technology is shown to offer an excellent and uncomplicated means of developing large arrays with very good control on the geometry. Author

Descriptors:

• *LASERS
• EMISSIVITY
• POWER
• CONFIGURATIONS
• GALLIUM ARSENIDES
• SEMICONDUCTOR DIODES
• INFRARED RADIATION
• COHERENT RADIATION

Subject Categories:

• Lasers and Masers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE