GENERALIZED MODEL FOR SEMICONDUCTOR RADIATION RESPONSE PREDICTION.
Quarterly rept. no. 4, 1 Feb-30 Apr 68,
NORTHROP CORPORATE LABS HAWTHORNE CA
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Study in the fourth quarter of the program extended the electrical performance and radiation response predictions of the DTL gate and differential amplifier microcircuits. In the DTL gate study, electrical performance characterization included the d-c transfer function and the pulsed electrical switching response. The ionizing radiation-induced response was characterized for the environments of the xenon flash lamp and pulsed flash x-ray. Responses were accurately calculated with the use of SCEPTRE and the lumped-model representations of the junction-isolated and dielectric-isolated gates. In the differential amplifier study, an accurate lumped-model was developed using ECAP. Using manual parameter optimization, the small-signal electrical performance and radiation-induced response were accurately characterized. Author
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