Accession Number:

AD0836102

Title:

DEVELOPMENT OF A BURIED-GATE POWER FIELD-EFFECT TRANSISTOR.

Descriptive Note:

Interim engineering rept. no. 4, 11 Jul-10 Oct 67,

Corporate Author:

TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR-COMPONENTS DIV

Personal Author(s):

Report Date:

1968-07-01

Pagination or Media Count:

24.0

Abstract:

Parasitic components of junction gate and insulated-gate field-effect-transistors were examined. Particular emphasis was directed toward evaluating their effects of the high-frequency performance of these devices. Using the results of this examination, a modified version of the initial power MOSFET was designed. The first run produced devices with similar d-c characteristics, but greatly reduced parasitic capacitance values. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE