DEVELOPMENT OF A BURIED-GATE POWER FIELD-EFFECT TRANSISTOR.
Interim engineering rept. no. 4, 11 Jul-10 Oct 67,
TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR-COMPONENTS DIV
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Parasitic components of junction gate and insulated-gate field-effect-transistors were examined. Particular emphasis was directed toward evaluating their effects of the high-frequency performance of these devices. Using the results of this examination, a modified version of the initial power MOSFET was designed. The first run produced devices with similar d-c characteristics, but greatly reduced parasitic capacitance values. Author
- Electrical and Electronic Equipment