Accession Number:

AD0836042

Title:

FORMATION OF THIN-FILM ACTIVE DEVICES BY VACUUM TECHNIQUES,

Descriptive Note:

Corporate Author:

MELPAR FALLS CHURCH VA

Personal Author(s):

Report Date:

1965-01-01

Pagination or Media Count:

170.0

Abstract:

In the period of February 8th through 12th three U.S. Naval Avionics Facility NAFI personnel were given detailed instruction on the techniques and instructions applicable to the formation and characterization of active TFT devices. Details of the equipment, materials, vendors, deposition procedure, monitoring techniques and device characterization were given by Melpar personnel. In addition information relating to the Hall Mobility measuring equipment and circuit, sensitive Field-Effect detection circuit, substrate cleaning procedure, molybdenum flatness specifications and etching procedures were furnished. Articles covering much of the active device work carried out at Melpar were furnished to NAFI personnel. Approximately 30 tellurium, and 100 cadmium selenide devices were formed under the observation of NAFI personnel. Of the devices formed approximately sixty percent of the units were very active gm to 1000 micro mhos for Te units and to 10,000 micro mhos for CdSe units. Approximately one third of the CdSe units were formed in the large production unit. All other devices were formed in small vacuum units 10 inch bell jar units. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Manufacturing and Industrial Engineering and Control of Production Systems

Distribution Statement:

APPROVED FOR PUBLIC RELEASE