GE-SI HETEROJUNCTIONS AS NANOSECOND SWITCHING DIODES (HETEROZLACZA GE-SI JAKO NANOSEKUNDOWE DIODY PRZELACZAJACE),
Unedited rough draft,
FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OH
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Three versions of a high-speed switching diode employing Ge-Si heterojunctions are described. Switching time for all three is independent of minority carrier lifetime and base thickness 150 microns. The diodes differ only specific resistance of the Si base D1, 12 ohm-cm D2, 1.2 ohm-cm in t0.12 ohm-cm. Parameters of the diodes for a bias voltage of -4 v are given.
- Electrical and Electronic Equipment