Accession Number:

AD0832926

Title:

GE-SI HETEROJUNCTIONS AS NANOSECOND SWITCHING DIODES (HETEROZLACZA GE-SI JAKO NANOSEKUNDOWE DIODY PRZELACZAJACE),

Descriptive Note:

Unedited rough draft,

Corporate Author:

FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OH

Personal Author(s):

• Janik, Elzbieta

Report Date:

1967-08-18

Pagination or Media Count:

10.0

Abstract:

Three versions of a high-speed switching diode employing Ge-Si heterojunctions are described. Switching time for all three is independent of minority carrier lifetime and base thickness 150 microns. The diodes differ only specific resistance of the Si base D1, 12 ohm-cm D2, 1.2 ohm-cm in t0.12 ohm-cm. Parameters of the diodes for a bias voltage of -4 v are given.

Descriptors:

• *SEMICONDUCTOR DIODES
• SWITCHING CIRCUITS
• GERMANIUM
• SILICON
• CHARGE CARRIERS
• LIFE EXPECTANCY(SERVICE LIFE)
• USSR

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE