Accession Number:

AD0832013

Title:

300 deg C Transformer Rectifier

Descriptive Note:

Interim technical rept. no. 1, 1 Jan-31 Mar 1968

Corporate Author:

RCA ELECTRONIC COMPONENTS SOMERVILLE NJ

Personal Author(s):

• Krassner, L.

Report Date:

1968-04-01

Pagination or Media Count:

25.0

Abstract:

Techniques for preparing gallium-arsenide surfaces free of damage and suitable for epitaxial growth were investigated. A method of substrate preparation to be used for preliminary growth studies was introduced. Growth studies were started in a water vapor transport epitaxial system. This system was constructed specifically to evaluate the structure of epitaxial films in relation to the substrate. Design improvements to reduce contamination of epitaxial layers due to leaks and corrosion were made on the vapor hydride epitaxial system. This improved system is expected to be in operation shortly.

Descriptors:

• *GALLIUM ARSENIDES
• *CRYSTAL RECTIFIERS
• STRUCTURAL PROPERTIES
• VAPORS
• WATER
• SUBSTRATES
• TRANSPORT PROPERTIES
• SURFACE PROPERTIES
• GARNET
• ALUMINATES
• MANUFACTURING
• HYDRIDES
• EPITAXIAL GROWTH

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE