Accession Number:

AD0831898

Title:

MICROWAVE GENERATION FROM AVALANCHE TRANSIT TIME DIODES

Descriptive Note:

Quarterly rept. no. 2, 1 Oct-31 Dec 1967

Corporate Author:

SYLVANIA ELECTRIC PRODUCTS INC WOBURN MA SEMICONDUCTOR DIV

Personal Author(s):

• Solomon, Arthur H.
• Levi, Clifford
• Scherer, Ernst

Report Date:

1968-04-01

Pagination or Media Count:

46.0

Abstract:

Work during the second quarter was devoted to device geometry optimization, inverted chip mounting, diamond heat sink classification and evaluation of noise characteristics. While inverted chip mounting was effective in reducing thermal resistance, oscillator efficiency was lower than that obtained from similar devices conventionally mounted. Several possible reasons for the poor RF performance of inverted chip diodes are being investigated. However, conventionally-mounted devices were pulse tested and over 1 watt of peak pulse power was obtained at 8.6 GHz, with 7 percent efficiency. These diodes are being studied as models of desired characteristics in inverted mount devices.

Descriptors:

• *AVALANCHE DIODES
• *MICROWAVE OSCILLATORS
• CAVITY RESONATORS
• DIAGRAMS
• EFFICIENCY
• INFRARED SPECTRA
• IONS
• NOISE
• OPTIMIZATION
• POWER
• RELIABILITY(ELECTRONICS)
• SILICON
• STABILITY
• THERMAL INSULATION

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE