MICROWAVE GENERATION FROM AVALANCHE TRANSIT TIME DIODES
Quarterly rept. no. 2, 1 Oct-31 Dec 1967
SYLVANIA ELECTRIC PRODUCTS INC WOBURN MA SEMICONDUCTOR DIV
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Work during the second quarter was devoted to device geometry optimization, inverted chip mounting, diamond heat sink classification and evaluation of noise characteristics. While inverted chip mounting was effective in reducing thermal resistance, oscillator efficiency was lower than that obtained from similar devices conventionally mounted. Several possible reasons for the poor RF performance of inverted chip diodes are being investigated. However, conventionally-mounted devices were pulse tested and over 1 watt of peak pulse power was obtained at 8.6 GHz, with 7 percent efficiency. These diodes are being studied as models of desired characteristics in inverted mount devices.
- Electrical and Electronic Equipment