Accession Number:

AD0829203

Title:

ELECTRONIC CHARACTERISTICS OF A QUENCHED MODE GUNN EFFECT OSCILLATOR.

Descriptive Note:

Technical rept.,

Corporate Author:

CORNELL UNIV ITHACA NY

Personal Author(s):

Report Date:

1968-02-01

Pagination or Media Count:

145.0

Abstract:

The electronic characteristics of a quenched mode Gunn effect oscillator has been studied both theoretically and experimentally. The theoretical work is based on a large signal analysis and a computer program is used to simulate the Gunn diode in a resonant circuit to predict the domain dynamics, the i-v characteristics and the overall electrical behavior of a quenched mode Gunn oscillator. Good agreement of this theory with many experimental observations is shown. A simple method for measuring the i-v characteristics and electronic admittance of an oscillating Gunn diode operating in a quenched mode is described. A P-shape i-v characteristic and admittance measurements show that the diode equivalent circuit is a series combination of a negative conductance in shunt with a capacitive susceptance and the impedance of the low-field region. The microwave performance of a quenched mode Gunn oscillator and the effect on this performance of varying the bias voltage and the external circuit loads have been investigated experimentally and the results are presented. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE