STUDY OF NOISE IN SEMICONDUCTOR DEVICES.
Semi-annual technical rept. no. 4, 16 Mar-15 Sep 67,
MINNESOTA UNIV MINNEAPOLIS DEPT OF ELECTRICAL ENGINEERING
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Excess noise measurements in large MOS FETs indicate that the excess noise ratio at the gate and at the drain are comparable. p-type channel devices have lower excess noise ratios than n-type channel devices this can be related to the structure of the channel. Mobility fluctuations are invoked to explain the results. The measured correlation impedance does not agree with what the thermal noise theory predict. Mobility fluctuations can explain the magnitude of the effect. Microwave transistor noise figures can be interpreted in terms of the base resistance and the cut-off frequency of the transistors. Author
- Electrical and Electronic Equipment