FAILURE MECHANISMS IN SEMICONDUCTOR DIODES.
Semiannual rept. no. 5, 4 Jan-4 Jul 67,
GENERAL ELECTRIC CO SYRACUSE NY SEMICONDUCTOR PRODUCTS DEPT
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The failure modes which have been identified are described in terms of the stress conditions required to induce them and the rates at which response may be observed. Typical values of the degraded parameter and the recovery characteristics are also discussed. All of the stresses utilized were highly accelerated, and the discussion is subdivided into the general classes of forward and reverse bias stresses. Author
- Electrical and Electronic Equipment