INVESTIGATION OF NEW CONCEPTS AND LINEAR BEAM TECHNIQUES FOR MICROWAVE GENERATION.
CORNELL UNIV ITHACA NY SCHOOL OF ELECTRICAL ENGINEERING
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LSA operation at X-band yielding peak pulse powers of 615 watts, operation at S-band and a computer analysis of a resonant circuit for the LSA mode are reported. Studies of the microwave performance of a quenched mode Gunn diode has been completed. A new mode the Hybrid mode of operation using the bulk negative resistance of Gunn effect is proposed. This mode has some possible advantages over the LSA mode. The research on low NL product GaAs diodes has also been completed. Small and large signal admittances of silicon p-n junction diodes under avalanche breakdown conditions through S, C, and X-band frequency ranges have been measured. Studies of the high-efficiency, high-power operation of PNN silicon avalanche diodes as reported by workers at RCA, have been initiated. Attempts to eliminate the low field breakdown in InSb diodes observed previously have been unsuccessful. Initial preparations for measuring the microwave impedance of short samples of n-InSb are almost completed. A GaAs epitaxial growth apparatus has been put into full operation. Author
- Electrical and Electronic Equipment