300C SEMICONDUCTOR FOR POWER DEVICES.
Final technical rept. 1 Jul 66-30 Sep 67,
RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES
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The successful design and development of a 50-ampere rectifier with reverse breakdown over 150 volts, operable in a 300C ambient temperature, is described. High-operating-temperature and reverse-breakdown requirements led to the choice of gallium arsenide and gallium arsenide-phosphide as the semiconductor materials employed. The rectifier junctions were grown by vapor phase epitaxial techniques, and very-high breakdown voltage was achieved. Growth of defect-free large-area 0.175-mil diameter junctions was a major accomplishment. A complete process for rectifier fabrication was developed, including etching, contacting, mounting, and junction coating techniques. The results of mechanical, electrical, and environmental tests are presented. Author
- Electrical and Electronic Equipment
- Solid State Physics