Accession Number:

AD0827343

Title:

300C SEMICONDUCTOR FOR POWER DEVICES.

Descriptive Note:

Final technical rept. 1 Jul 66-30 Sep 67,

Corporate Author:

RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES

Personal Author(s):

Report Date:

1968-02-01

Pagination or Media Count:

94.0

Abstract:

The successful design and development of a 50-ampere rectifier with reverse breakdown over 150 volts, operable in a 300C ambient temperature, is described. High-operating-temperature and reverse-breakdown requirements led to the choice of gallium arsenide and gallium arsenide-phosphide as the semiconductor materials employed. The rectifier junctions were grown by vapor phase epitaxial techniques, and very-high breakdown voltage was achieved. Growth of defect-free large-area 0.175-mil diameter junctions was a major accomplishment. A complete process for rectifier fabrication was developed, including etching, contacting, mounting, and junction coating techniques. The results of mechanical, electrical, and environmental tests are presented. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE