TRANSISTOR, UHF, SILICON, POWER, LINEAR, 50-WATT, 500-MHZ WITH 10-DB POWER GAIN.
Final rept. 20 May 66-31 Aug 67,
RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES
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The objective was to produce a transistor capable of delivering 50 watts of output power at 500 megahertz with 10-dB power gain and 50-percent efficiency. The fabrication of a metal-oxide-metal transistor employing integral leads was achieved. Processing problems imposed limitations in device fabrication that required an alternate approach. Advances in technology and package design were applied to a device in which overlay technology and double-base geometry with integral leads were employed. Author
- Electrical and Electronic Equipment