Accession Number:

AD0827335

Title:

TRANSISTOR, UHF, SILICON, POWER, LINEAR, 50-WATT, 500-MHZ WITH 10-DB POWER GAIN.

Descriptive Note:

Final rept. 20 May 66-31 Aug 67,

Corporate Author:

RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES

Personal Author(s):

Report Date:

1968-02-01

Pagination or Media Count:

130.0

Abstract:

The objective was to produce a transistor capable of delivering 50 watts of output power at 500 megahertz with 10-dB power gain and 50-percent efficiency. The fabrication of a metal-oxide-metal transistor employing integral leads was achieved. Processing problems imposed limitations in device fabrication that required an alternate approach. Advances in technology and package design were applied to a device in which overlay technology and double-base geometry with integral leads were employed. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE