Accession Number:

AD0823389

Title:

COMMON-EMITTER L-BAND SMALL-SIGNAL SILICON TRANSISTOR AMPLIFIER.

Descriptive Note:

Semiannual rept. no. 1, 10 Jan-10 Jul 67,

Corporate Author:

TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR-COMPONENTS DIV

Personal Author(s):

Report Date:

1967-11-01

Pagination or Media Count:

24.0

Abstract:

Using the 2.5-millimicron L-83 and L-153B device geometries, devices were fabricated in the TI-Line package, with common emitter power gain up to 11 dB at 2 GHz. Use of the miniature coaxial package gave devices with power gains up to 13 dB at 2 GHz. Photomasks are on order which will be more usable than the 1.25-millimicron geometry and will represent sufficient improvement over existing device geometries to permit the realization of 14 dB gain at 2 GHz.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE