THIN FILM THERMISTOR TEMPERATURE SENSOR.
Final rept. Aug 65-Oct 66 on Phase 1,
VICTORY ENGINEERING CORP SPRINGFIELD NJ
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Thin film radiosonde thermistors have been developed which can replace the current ML-419AMT-4 radiosonde element. These units required the special development of a new thermistor material as well as a new method of application. The new material has a temperature coefficient of 3.07, a beta of 2732 K and a 0 to 50 C ratio of 4.7. This material can be further modified in order to shift these parameters. Low energy sputtering techniques were developed which allow this material to be deposited on various substrates intact. Substrates included aluminum oxide, beryllium oxide and aluminum foil. The films are stable and can take temperatures to 125 C if necessary, are rugged and have feasible dissipation and time constants. Author
- Electrical and Electronic Equipment