Accession Number:

AD0823120

Title:

MICROWAVE TRANSISTORS.

Descriptive Note:

Rept. no. 8 (Final) 1 Jun 65-31 May 67,

Corporate Author:

TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR-COMPONENTS DIV

Report Date:

1967-11-01

Pagination or Media Count:

132.0

Abstract:

Planar double-diffused transistors were fabricated using phosphorus-doped silicon dioxide as a mask. Some of the better devices exhibited the following microwave performance unilateral gains of 10.0 dB at 3 GHz and 5.4 dB at 6 GHz maximum available gains of 6.5 - 7.0 dB at 3 GHz and 2.0 - 2.2 dB at 6 GHz noise figures of 6.6 - 7.4 dB at 3 GHz and 8.5 - 11.6 dB at 6 GHz. Epitaxial growth techniques, silicon nitride masks, and heavily doped base contact areas were investigated. Improved microwave transistor packages were developed. A microwave measurements study program was undertaken. S-band and C-band receiver front ends were completed and delivered. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE