Accession Number:

AD0819627

Title:

DESIGN AND DEVELOPMENT OF INTEGRATED SEMICONDUCTOR CIRCUITS UTILIZING FIELD - EFFECT DEVICES.

Descriptive Note:

Interim development rept. Feb-May 67.

Corporate Author:

WESTINGHOUSE ELECTRIC CORP ELKRIDGE MD MOLECULAR ELECTRONICS DIV

Personal Author(s):

Report Date:

1967-05-01

Pagination or Media Count:

20.0

Abstract:

The purpose of this contract is to design, develop and fabricate an integrated RF amplifier using n-channel MOS transistors connected in a cascode configuration. The integrated RF amplifier shall have a minimum power gain of 20 or - 1.5 db over the frequency band 2-32 Mhz, an automatic gain control AGC range of 40 db and a noise figure of 5 db maximum. It also calls for special emphasis on reduced intermodulation distortion. It is planned to accomplish this work in three phases. In phase I reliable n-channel normally-ON MOS transistors were fabricated. Some preliminary study of the performance characteristics of the transistors were investigated. Phase II includes detailed evaluation of the n-channel MOS transistors in the RF amplifier circuit. This report is a summary of work performed in Phase II of the contract.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE