DESIGN AND DEVELOPMENT OF INTEGRATED SEMICONDUCTOR CIRCUITS UTILIZING FIELD - EFFECT DEVICES.
Interim development rept. Feb-May 67.
WESTINGHOUSE ELECTRIC CORP ELKRIDGE MD MOLECULAR ELECTRONICS DIV
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The purpose of this contract is to design, develop and fabricate an integrated RF amplifier using n-channel MOS transistors connected in a cascode configuration. The integrated RF amplifier shall have a minimum power gain of 20 or - 1.5 db over the frequency band 2-32 Mhz, an automatic gain control AGC range of 40 db and a noise figure of 5 db maximum. It also calls for special emphasis on reduced intermodulation distortion. It is planned to accomplish this work in three phases. In phase I reliable n-channel normally-ON MOS transistors were fabricated. Some preliminary study of the performance characteristics of the transistors were investigated. Phase II includes detailed evaluation of the n-channel MOS transistors in the RF amplifier circuit. This report is a summary of work performed in Phase II of the contract.
- Electrical and Electronic Equipment