Accession Number:

AD0819502

Title:

RELIABILITY TESTING AND PREDICTION TECHNIQUES FOR HIGH POWER SILICON TRANSISTORS

Descriptive Note:

Technical Report,19 Apr 1965,19 Oct 1966

Corporate Author:

TEXAS INSTRUMENTS INC DALLAS DALLAS United States

Personal Author(s):

Report Date:

1967-06-01

Pagination or Media Count:

343.0

Abstract:

Work performed under this contract is divided into two main parts 1 a Test and Data Analysis program designed to produce a method for reliability screening and 2 a Physics of Failure Program on fundamental mechanisms causing device degradation. The test program was divided into three parts, Preliminary, Main and Verification Test Programs. Results of each test program are discussed. Accelerated test results and comparison of fixed stress and step stress results are presented. A non-destructive screening procedure was developed and is contained in this report. Three computer programs, SERF, LINDA 1 and LINDA 2 were developed to assist in the development of the nondestructive screening procedure. The Physics of Failure Program consisted of studies of surfaces and oxides, noise, thermal effects and second breakdown. Extensive analyses of failures were also carried out. Surface studies include the development and analysis of techniques for the production of metal-oxide-silicon MOS systems that are electrically and thermally stable. Thermal studies include results of actual temperature measurements of operating transistors using an infrared IR microradiometer. Results of electrical and thermal techniques are compared as a tool for measuring thermal resistance. Models to calculate the current and temperature distributions in operating power transistors give results which are in agreement with experimental data. The second breakdown studies include a discussion of a model for thermal breakdown.

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE