DEVELOPMENT AND FABRICATION OF SOLID-STATE HIGH-SPEED OPTICAL DETECTORS
Interim engineering rept. no. 3, 16 Feb-15 May 1967
TEXAS INSTRUMENTS INC DALLAS
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Work continued on development and fabrication of a high-speed silicon avalanche photodetector optimized for operation at 0.9 micrometer. During this quarter work was concentrated on the fabrication and characterization of diodes. A run of NPpiP diodes was completed with avalanche breakdown taking place in the active region instead of the edge. However, there were microplasmas, and the gains were low. A new run of the graded-guardring structure was completed, and the yield was high. With this run and the run processed earlier there are sufficient diodes to meet the contract requirements. Twenty state-of-the-art samples were characterized and delivered. Results on the NP graded-guardring diodes were very encouraging. Avalanche gains of over 300 were typical. Several of the diodes exhibited theoretical noise characteristics with gains greater than 600. The series resistance was determined to be approximately 25 ohms from forward bias dc measurements. Capacitance of both types of structures was approximately 1.4 pF at breakdown.
- Electrical and Electronic Equipment