Accession Number:

AD0818595

Title:

GUNN EFFECT DEVICES

Descriptive Note:

Quarterly technical rept. no. 6, 15 Mar-15 Jun 1967

Corporate Author:

HEWLETT-PACKARD LABS PALO ALTO CA

Personal Author(s):

Report Date:

1967-08-01

Pagination or Media Count:

32.0

Abstract:

A comparison is made of the fabricated GaAs Gunn effect devices TE65s. A slight improvement in power output has been achieved along with a considerable lowering of device FM noise. Along with microwave and noise measurements, preliminary results of a simplified computer study on the bulk negative resistance mode of operation is given.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE