THIN FILM RC NETWORKS FOR SILICON INTEGRATED CIRCUITS.
Quarterly rept. no. 3, 1 Feb-30 Apr 67,
MOTOROLA INC PHOENIX AZ SEMICONDUCTOR GROUP
Pagination or Media Count:
The following outlines the areas of investigation during this time period a residual gas analyzer has been installed on the cermet deposition system in efforts to improve control over the deposition of TaSi2, Cr3Si, Al2O3 cermet resistors, residual gas analysis during the cermet depositions indicates a considerable amount of water vapor is being gettered by the freshly deposited film, evidence of the effects of small partial pressures of gases can easily be seen in the conductance of the depositing cermet film, mechanical mixtures of Au and Ta2O5 will not remain mixed in the cermet feeder, a second RF sputtering system was obtained and made operational in the latter part of this quarter. HfO2 dielectric films were deposited in the second RF system, Mo-Au metallizations system is being investigated for compatibility with integrated circuits and high dielectric constant materials, fabrication and delivery of the MIC-C50 low power gate circuits to ECOM was completed, and several wafers have completed the diffusion cycles of the IF amplifier and are being processed through the thin film resistor and capacitor steps.
- *INTEGRATED CIRCUITS
- CHROMIUM COMPOUNDS
- EPITAXIAL GROWTH
- THERMAL STABILITY
- GOLD ALLOYS
- DIELECTRIC FILMS
- TANTALUM COMPOUNDS
- ELECTRON GUNS
- MOLYBDENUM ALLOYS
- Electrical and Electronic Equipment