STUDY OF INFRARED PARAMETRIC AMPLIFIERS.
Final rept. 1 Jul 65-30 Jun 67,
NORTH AMERICAN AVIATION INC ANAHEIM CA AUTONETICS DIV
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The results of a feasibility study and experimental investigation of infrared solid state parametric amplification using quasi-microwave techniques are reported herein. To obtain an efficient parametric interaction, a highly nonlinear medium is required with means to compensate for the refractive index dispersion. A quasi-microwave approach has been explored as a means to fulfill the phase-match condition in compound semiconductors such as GaAs which is highly nonlinear and lacks birefringence. The quasi-microwave approach employs a dielectric waveguide with transverse dimensions comparable to the wavelength wherein control of the kind and order of bounded modes is exercised. The processes of integrated circuit technology have been successfully used to form a variety of infrared waveguide structures with dimensions ranging between 0.25 and 25 microns. Techniques to excite, control, and identify specific modes of low orders of either kind have been established. Principle waveguide structures investigated include 1 rectangular dielectric image line formed photolithographically on heteroepitaxial structures using GaAs and 2 depletion layer waveguide formed in a reverse-biased GaAs p-n junction. Infrared waveguides have been fabricated from a variety of crystalline materials. Experiments using rectangular dielectric image line structures have demonstrated the feasibility to control the propagation characteristics. Within the constraints imposed, the use of a depletion layer waveguide has been less than satisfactory because of the absence of field containment due to the asymmetry of boundary conditions. Author