DEVELOPMENT OF A BURIED-GATE POWER FIELD-EFFECT TRANSISTOR.
Interim engineering rept. no. 2, 11 Jan-10 Apr 67,
TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR-COMPONENTS DIV
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The contract work program was expanded to include evaluation of both the MOSFET and junction FET as well as the buried-gate FET for high-power applications. A P-channel enhancement mode MOSFET was designed. Devices fabricated from these runs had a current capability greater than one amp, with 25-V breakdown voltages. A 27-MHz cutoff frequency was measured I sub D -0.5 A. Author
- Electrical and Electronic Equipment