Accession Number:

AD0818117

Title:

DEVELOPMENT OF A BURIED-GATE POWER FIELD-EFFECT TRANSISTOR.

Descriptive Note:

Interim engineering rept. no. 2, 11 Jan-10 Apr 67,

Corporate Author:

TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR-COMPONENTS DIV

Personal Author(s):

• Bruncke, W. C.

Report Date:

1967-07-01

Pagination or Media Count:

24.0

Abstract:

The contract work program was expanded to include evaluation of both the MOSFET and junction FET as well as the buried-gate FET for high-power applications. A P-channel enhancement mode MOSFET was designed. Devices fabricated from these runs had a current capability greater than one amp, with 25-V breakdown voltages. A 27-MHz cutoff frequency was measured I sub D -0.5 A. Author

Descriptors:

• (*FIELD EFFECT TRANSISTORS
• RADIOFREQUENCY POWER)
• ELECTRODES
• PERFORMANCE(ENGINEERING)
• EPITAXIAL GROWTH
• SILICON
• EQUATIONS

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE