RESEARCH AND DEVELOPMENT OF SEMICONDUCTOR DIODES FOR USE IN HARMONIC GENERATOR APPLICATIONS USING SINGLE DIODES.
Quarterly progress rept. no. 2, 20 Dec 66-19 Mar 67,
MICROWAVE ASSOCIATES INC BURLINGTON MA
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Radial line diodes were constructed. Each had six diode mesas on the single chip. It was found, however, that the capacitance of each individual diode was higher than required. Thus, only four of the diodes were used to achieve the desired 3-pF capacitance, the remaining two being left unconnected. This technique offered the advantage that the best diodes could be selected on the basis of capacitance and breakdown voltage. The capacitance of an empty diode package was measured and was found to be 4.4 pF, a value somewhat in excess of the theoretically calculated 3.92 pF. The 0.48-pF excess capacitance is thought to be primarily due to fringing fields at the edge of the radial line. After packaging, the radial line diodes were completely characterized. Measurements of voltage breakdown and capacitance were obtained using standard low-frequency measurements. The cutoff frequency and inductance were obtained using slotted-line techniques at S-band.
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