Accession Number:

AD0816300

Title:

RESEARCH AND DEVELOPMENT OF LOCALIZED DEFECTS AND HOT SPOTS IN HIGH VOLTAGE PNPN INVERTER SWITCHES.

Descriptive Note:

Quarterly progress rept. no. 4, 1 Mar-1 Jun 67.

Corporate Author:

GENERAL ELECTRIC CO AUBURN NY SEMICONDUCTOR PRODUCTS DEPT

Personal Author(s):

Report Date:

1967-06-01

Pagination or Media Count:

48.0

Abstract:

The report deals with the research and development conducted during the investigation of localized defects and hot spots in high voltage p-n-p-n inverter switches. The effects of gallium and phosphorus layers upon the diffusion of gold in silicon are reported. In particular, the distribution of gold in Device D is illustrated. In connection with the Device D failure study, work was performed in relation to 1 the effects of the emitter short patterns, 2 the size and distribution of hot spots, 3 the device photoresponse in the vicinity of a hot spot, and 4 thermal transient measurements at a hot spot. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE