RESEARCH AND DEVELOPMENT OF LOCALIZED DEFECTS AND HOT SPOTS IN HIGH VOLTAGE PNPN INVERTER SWITCHES.
Quarterly progress rept. no. 4, 1 Mar-1 Jun 67.
GENERAL ELECTRIC CO AUBURN NY SEMICONDUCTOR PRODUCTS DEPT
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The report deals with the research and development conducted during the investigation of localized defects and hot spots in high voltage p-n-p-n inverter switches. The effects of gallium and phosphorus layers upon the diffusion of gold in silicon are reported. In particular, the distribution of gold in Device D is illustrated. In connection with the Device D failure study, work was performed in relation to 1 the effects of the emitter short patterns, 2 the size and distribution of hot spots, 3 the device photoresponse in the vicinity of a hot spot, and 4 thermal transient measurements at a hot spot. Author
- Electrical and Electronic Equipment