STUDY OF NOISE IN SEMICONDUCTOR DEVICES.
Semi-annual technical rept. no. 3, 16 Sep 66-15 Mar 67,
MINNESOTA UNIV MINNEAPOLIS DEPT OF ELECTRICAL ENGINEERING
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The existing transistor noise theory was further tested. It is shown that the theory is adequate, even at high injection levels, except for the fact that it cannot explain the correlation between the emitter noise emf e and the collector noise current generator i. The experiments clearly indicate that this is a high level injection effect and give the most prominent features of this correlation effect. Noise measurements are reported on microwave transistors at 2 GHz. It is suggested to provide microwave transistors with extra leads to facilitate neutralization. Noise measurements on large geometry MOS-FETs are reported these measurements are now consistent, but there is not yet a full theoretical explanation. Fletchers theory of the p-i-n diode is extended to high frequencies. Work on GaAs diodes and FET mixers will be reported in a special report. Author
- Electrical and Electronic Equipment