EFFECTS OF UNIAXIAL STRESS ON SILICON AND GERMANIUM.
Technical management rept. no. 1, 1 Mar-31 May 67,
WESTINGHOUSE RESEARCH LABS PITTSBURGH PA
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This report covers the first three months of effort in a program to study the effects of uniaxial stress on silicon and germanium. Part I is a description of the theoretical background for the uniaxial stress experiments planned in this program. The Haynes-Shockley experiment for measurement of drift mobility is described and the theoretical and experimental refinements needed for the measurement of mobility under high uniaxial stress conditions are reported. Then the theory for the dependence of the electron mobility on uniaxial stress is developed in three steps 1 calculation of the dependence of valley electron population on uniaxial stress, 2 calculation of single valley mobility, 3 averaging single valley mobilities to get sample electron mobility. Part II of this report is a survey of the literature in this field. Author
- Solid State Physics