TRANSISTOR, VHF, SILICON, POWER, LINEAR, 100-WATT PEP, 76-MHZ WITH 10-DB POWER GAIN.
Semiannual rept. 1 Sep 66-28 Feb 67,
RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES
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The design of high-frequency, high-power transistors for use in single side-band equipment is discussed and an empirical relation between base area and power gain is presented. Based on these data, a design for a 100-watt PEP at 76-megahertz transistor is given. This transistor design is an overlay construction having diffused ballast resistors in series with each emitter region. The fabrication of this device with integral leads and assembly in a high-frequency, high-power package is described. Author
- Electrical and Electronic Equipment