Accession Number:

AD0815981

Title:

TRANSISTOR, VHF, SILICON, POWER, LINEAR, 100-WATT PEP, 76-MHZ WITH 10-DB POWER GAIN.

Descriptive Note:

Semiannual rept. 1 Sep 66-28 Feb 67,

Corporate Author:

RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES

Personal Author(s):

Report Date:

1967-06-01

Pagination or Media Count:

37.0

Abstract:

The design of high-frequency, high-power transistors for use in single side-band equipment is discussed and an empirical relation between base area and power gain is presented. Based on these data, a design for a 100-watt PEP at 76-megahertz transistor is given. This transistor design is an overlay construction having diffused ballast resistors in series with each emitter region. The fabrication of this device with integral leads and assembly in a high-frequency, high-power package is described. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE