SOLID STATE ULTRAVIOLET DEVICES FOR FIRE DETECTION IN ADVANCED FLIGHT VEHICLES
Final rept. 1 Feb 1966-30 Apr 1967
WESTINGHOUSE RESEARCH LABS PITTSBURGH PA
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Improvement has been made in both theoretical analyses and fabrication techniques of silicon carbide photovoltaic diodes. A P-I-N junction theory of photodiodes has been developed which includes all carrier transport parameters. This general theory is compared with the simple model developed previously for the explanation of the dependences of the peak response wavelength on the junction depth and temperature. Eight silicon carbide ultraviolet detectors were fabricated. Using improved fabrication techniques these detectors had a lower electrical impedance and higher response than detectors previously fabricated. The feasibility of using aluminum nitride, a high temperature semiconductor with a band gap wider than silicon carbide, in the fabrication of ultraviolet detectors was also studied. The sublimation technique was used to grow small hexagonal crystals about 2mm across, and several epitaxial methods were used to grow single crystal layers of A1N on both SiC and A1N.
- Safety Engineering