RADIATION EFFECTS IN THIN FILM TRANSISTORS.
Quarterly rept. no. 2, 1 Dec 66-28 Feb 67,
HUGHES AIRCRAFT CO FULLERTON CA
Pagination or Media Count:
The purpose of the present investigation is to improve the performance of the silicon-sapphire thin film transistor in the high energy radiation environment. This is to be accomplished by a study of the influence of various design variables, selected on the basis of design theory and prior work, on the device performance in this environment. The investigation consists of radiation effects testing of silicon-on-sapphire devices specially fabricated with known design variations, and interpretation of experimental data on the basis of the principles of analysis of variance. The development of appropriate design equations will also be carried out and will be compared with experiment. During the Second Quarter, transport equations governing the behavior of radiation induced excess carrier generation in the gate insulator were developed and estimates made of the nature of the predicted effects relative to the threshold of voltage shift. In addition, during the latter part of the reporting period, delivery was made on devices with the thermal oxide variation. A new technique was developed for the measurement of threshold voltage that is not influenced by variations in device leakage current. Author
- Electrical and Electronic Equipment
- Radioactivity, Radioactive Wastes and Fission Products