Accession Number:

AD0815000

Title:

300 C SEMICONDUCTOR FOR POWER DEVICES.

Descriptive Note:

Interim technical rept. no. 3, 1 Jan-31 Mar 67,

Corporate Author:

RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES

Personal Author(s):

Report Date:

1967-05-01

Pagination or Media Count:

39.0

Abstract:

During the period covering this report, vapor-phase, epitaxial p-n junctions were grown in gallium arsenide, and the effects of several parameters, including temperature and substrate condition on the junction quality, were studied. Microplasmas still limit the breakdown of large-area diodes 0.100-inch diameter but for diodes of smaller size 0.030-inch diameter the breakdown is now limited only by material purity. Improved procedures for etching gallium-arsenide junctions were developed so that the breakdown determined by the material parameters can be measured with surface conditions having a minimum effect. The preservation of such stable surfaces over long periods was not achieved completely, however. Techniques for package mounting diodes, were partly developed, permitting some forward-bias measurements. In addition, some analysis of junction profiles through capacitance-voltage plate was made. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE