DEVELOPMENT AND FABRICATION OF SOLID-STATE HIGH-SPEED OPTICAL DETECTORS
Interim engineering rept. no. 2, 16 Nov 1966-15 Feb 1967
TEXAS INSTRUMENTS INC DALLAS
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Work continued on development and fabrication of a high-speed silicon avalanche photodetector optimized for operation at 0.9 micrometers. During this quarter the work was concentrated on design and fabrication problems. The inversion-stopper ring formed by P-diffusion and the alloyed aluminum ring proved to be completely ineffective in preventing inversion layers and correspondingly high reverse leakage currents. The problem has been solved by a separate P-diffusion. The high electric field at the sharp radius of the N- diffusion in the NPPIP structure was found to be the cause of the edge breakdown. Preliminary indications are that fabrication of the structure with the original dimensions requires better control of diffusions. Good avalanche photodiodes have been fabricated using a graded guard ring structure. Uniform gains of greater than 150 across the diode active area were observed.
- Electrical and Electronic Equipment