ION IMPLANTATION DOPING TECHNIQUES.
Interim technical rept. no. 4, 1 Feb-30 Apr 67,
HUGHES RESEARCH LABS MALIBU CA
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During this quarter, satisfactory implants have been made with three p-type dopants of interest for column IV semiconductor materials. A thorough investigation of gallium as a dopant in silicon was completed. The 88 implants made included samples for evaluation by proton channeling and by neutron activation. In addition, a similar investigation of aluminum as a dopant in silicon was initiated. Investigations of the n-type dopants in silicon were reopened using arsenic. Ion beams of As, P, and N have proved to be satisfactorily generated in the scanned beam implantation systems. Hall effect measurements have been made on the gallium implanted layers in silicon. Considerable data on the maximum doping density compared with the thermal solubility limit were obtained. Data on gallium anneal behavior suggest that for implant temperatures of 500 C or less, the gallium ion ends its travel in an interstitial position in the silicon lattice and requires a higher anneal temperature to move to a substitutional site. Evaluation of boron implants was begun with sheet resistivity versus depth measurements. Author
- Solid State Physics