Accession Number:

AD0814842

Title:

DEVELOPMENT OF A BURIED-GATE POWER FIELD-EFFECT TRANSISTOR.

Descriptive Note:

Interim engineering rept. no. 1, 11 Oct 66-10 Jan 67,

Corporate Author:

TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR-COMPONENTS DIV

Personal Author(s):

Report Date:

1967-03-02

Pagination or Media Count:

25.0

Abstract:

Work began on development of a power FET using the buried-gate concept. During this quarter the works main emphasis was on mask design and the development of a selective epitaxial process. Epitaxial lines, 12.7 micrometers wide, were selectively deposited with a minimum of extraneous epitaxial growth on the neighboring SiO2 mask. On a 5-ohms centimeters substrate the deposited films had average breakdown voltages of 100 volts, which reduced to 10-20 volts after epitaxial-source deposition. Devices fabricated using this process had triode characteristics because of the resulting channel shape. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE