DEVELOPMENT OF A BURIED-GATE POWER FIELD-EFFECT TRANSISTOR.
Interim engineering rept. no. 1, 11 Oct 66-10 Jan 67,
TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR-COMPONENTS DIV
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Work began on development of a power FET using the buried-gate concept. During this quarter the works main emphasis was on mask design and the development of a selective epitaxial process. Epitaxial lines, 12.7 micrometers wide, were selectively deposited with a minimum of extraneous epitaxial growth on the neighboring SiO2 mask. On a 5-ohms centimeters substrate the deposited films had average breakdown voltages of 100 volts, which reduced to 10-20 volts after epitaxial-source deposition. Devices fabricated using this process had triode characteristics because of the resulting channel shape. Author
- Electrical and Electronic Equipment