Accession Number:

AD0814810

Title:

A STUDY OF FAILURE MECHANISMS IN SILICON PLANAR EPITAXIAL TRANSISTORS.

Descriptive Note:

Final rept. 20 May 65-1 Dec 66,

Corporate Author:

FAIRCHILD CAMERA AND INSTRUMENT CORP MOUNTAIN VIEW CA FAIRCHILD SEMICONDUCTOR

Report Date:

1967-04-01

Pagination or Media Count:

252.0

Abstract:

This report covers the entire 18-month period in this study of the mechanisms that lead to failure in silicon n-p-n planar epitaxial transistors. The approach taken was the division of the investigation into specific interest areas, each associated with a part of the transistor structure. The areas included Oxide and silicon dioxide interface field induced junctions at the silicon surface silicon bulk and metallization.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE