Accession Number:

AD0814184

Title:

BURNOUT RESISTANT X-BAND HOT CARRIER DETECTORS.

Descriptive Note:

Rept. no. 6 (Final), 1 Jul 65-28 Feb 67,

Corporate Author:

MSI ELECTRONICS INC WOODSIDE NY

Personal Author(s):

Report Date:

1967-05-01

Pagination or Media Count:

27.0

Abstract:

A program was undertaken to use the thermoelectric voltage associated with hot carriers in bulk semiconductors to develop highly sensitive burnout resistant X-Band video detectors. In the 9 GHz test frequency range, NN junctions exhibited a reversal phenomena which was attributed to the presence of Schottky barrier rectification competing with the thermoelectric effect for the available RF signal. These detection mechanisms are of opposite polarity and are separable with DC bias voltage. Gold alloyed junction devices operating in the Schottky mode yielded sensitivities as good as -47 DBM which was short of the objective -55 DBM. The work did indicate that a reasonable sensitivity could be obtained in an area type junction device that should be more burnout resistant than point contact devices. Other structures utilizing epitaxial regrowth NN junctions were also evaluated. A few space charged limited semiconductor detectors were also fabricated with inconclusive results. The analysis of space charged limited detectors indicate that the sensitivity could be obtained via this detection mechanism. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE