Microwave Oscillations in Bulk Semiconductors
Quarterly progress rept. no. 6, 1 Oct-31 Dec 1966
IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY
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The drift velocity as a function of field for heat treated bulk GaAs has been measured by a technique of microwave heating. The results agree with those obtained by Gunn and Elliott using fast pulse techniques and differ significantly from that predicted by the transferred electron model. It has been found that the GaAs melt can leach impurities from the silica envelope surrounding the growth vessel as well as from the vessel itself. When an all Spectrosil system is employed, the heat treatable acceptor present in crystals grown in silica systems appears to be absent. Calculations and experiments showing the adverse effect of temperature rise on oscillators are given.
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