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DEVELOPMENT AND EVALUATION OF TRANSISTOR, FIELD EFFECT, INSULATED GATE, 400-MEGAHERTZ AMPLIFIER.
Final rept. 1 Jul 65-30 Jun 66,
RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES
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A dual-gate tetrode n-channel MOS transistor with reduced channel dimensions has been developed. The reduced channel dimensions, 0.1 mil long by 10.0 mils wide, enable good power gain and noise performance at 400 megahertz. Cross-modulation distortion performance is excellent, comparable in all respects to low-frequency tetrodes developed under a previous contract. The major disadvantage of high-frequency-tetrode performance is the capacitance between second gate and center region, which reduces high-frequency power gain and increases the noise figure. This disadvantage has been overcome, on a narrow-band basis, by inserting an appropriate inductance in series with the second gate. Typical characteristics exhibited by the final device are as follows Maximum available power gain at 400 MHz 18.2 dB Noise figure at 400 MHz 3.4 Gate breakdown voltage or - 80 volts. One hundred units were delivered to USAEC. Twenty of these units were lifetested for 1000 hours 10 units on 150-mW dissipation 10 units on 175C storage. Nineteen life-tested units showed no significant change one unit was an isolated failure. Author
APPROVED FOR PUBLIC RELEASE