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TRANSIENT RADIATION EFFECTS ON MICROELECTRONICS AND SOLID-STATE DEVICES.
Final rept. 7 Aug 65-6 Oct 66,
NEW MEXICO UNIV ALBUQUERQUE BUREAU OF ENGINEERING RESEARCH
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A transport theory model is developed for microcircuit devices under transient radiation. The transport theory is shown to reduce to diffusion theory with proper approximations. A lossy transmission line model is compared with the Linvill model. Experimental measurements are given on air effects, secondary emission effects, surface conductance, and dry nitrogen effects for typical microcircuits under transient radiation. Comparisons are made between transient radiation effects from oxide-isolated and junction-isolated microcircuits. Cancellation circuits are developed for X-ray-induced currents. An elementary Townsend theory of discharge is applied to the problem of arcs between microcircuit leads in the presence of radiation. Recommendations are made on hardening microcircuits against transient radiation effects. Author
APPROVED FOR PUBLIC RELEASE