Accession Number:

AD0810463

Title:

TRANSIENT RADIATION EFFECTS ON MICROELECTRONICS AND SOLID-STATE DEVICES.

Descriptive Note:

Final rept. 7 Aug 65-6 Oct 66,

Corporate Author:

NEW MEXICO UNIV ALBUQUERQUE BUREAU OF ENGINEERING RESEARCH

Personal Author(s):

• Grannemann, W. W.
• Southward, Harold D.
• Byatt, William J.
• Boatwright, Lewellyn T.
• Cates, Howard

Report Date:

1967-01-01

Pagination or Media Count:

186.0

Abstract:

A transport theory model is developed for microcircuit devices under transient radiation. The transport theory is shown to reduce to diffusion theory with proper approximations. A lossy transmission line model is compared with the Linvill model. Experimental measurements are given on air effects, secondary emission effects, surface conductance, and dry nitrogen effects for typical microcircuits under transient radiation. Comparisons are made between transient radiation effects from oxide-isolated and junction-isolated microcircuits. Cancellation circuits are developed for X-ray-induced currents. An elementary Townsend theory of discharge is applied to the problem of arcs between microcircuit leads in the presence of radiation. Recommendations are made on hardening microcircuits against transient radiation effects. Author

Descriptors:

• *DAMAGE
• *INTEGRATED CIRCUITS
• TRANSIENTS
• MICROELECTRONICS
• FILMS
• SOLID STATE PHYSICS
• DIFFUSION
• INTEGRAL EQUATIONS
• X RAYS
• SECONDARY EMISSION
• ELECTRON IRRADIATION
• NITROGEN
• AIR
• ELECTRIC ARCS
• OXIDES
• SHIELDING
• SHIELDING

Subject Categories:

• Electrical and Electronic Equipment
• Radioactivity, Radioactive Wastes and Fission Products

Distribution Statement:

APPROVED FOR PUBLIC RELEASE