LOW TEMPERATURE INFRARED PHOTOCONDUCTORS.
Semiannual rept. 31 May-30 Nov 66,
RCA LABS PRINCETON NJ
Pagination or Media Count:
The continuation of research directed toward the development of an infrared-sensitive solid-state photoconductive multiplier is reported. Attention has been directed toward the investigation of materials which might serve as the wide band gap semiconductor layer in which the carriers excited in the photoconductor layer are accelerated. These materials must have the property of transmitting readily carriers of one sign only. Selective transport of holes, excited in n-type lead telluride films, through amorphous selenium films has been observed. Problems with respect to stability of the structures have been encountered. These appear, in part at least, to be due to structural changes in the films brought about by temperature cycling between room and liquid N2 temperatures caused by thermal expansion mismatch between films and substrate materials. Selective transport of electrons, excited in p-type lead telluride, through a polycrystalline evaporated film of AgCl appears to have been observed. This result must be confirmed by additional experiments. Author
- Electrical and Electronic Equipment
- Solid State Physics