STUDY OF NOISE IN SEMICONDUCTOR DEVICES.
Semi-annual technical rept. no. 2, 16 Mar-15 Sep 66,
MINNESOTA UNIV MINNEAPOLIS DEPT OF ELECTRICAL ENGINEERING
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The existing transistor noise theory is adequate for frequencies up to 1000 MHz in u.h.f. transistors if alpha sub dc and alpha sub o are measured and r sub bb and f sub alpha determined from noise measurements. At high currents I sub E and high frequencies the noise figure F deteriorates as I sub E to the 4th power, as expected from a collector junction saturation mechanism. The dependence of F on V sub cb is explained. Noise measurements are reported on microwave transistors at 2 Gc, on 2N930 transistors and on 2N697 transistors 1f noise at room temperature. Noise measurements are discussed in p-i-n diodes and in p-n-p-n devices. Noise measurements on junction FETs agree with theory, those on MOS-FETs do not. Noise measurements in GaAs lasers at liquid N2 temperatures give essentially shot noise. The reduction in noise of an FET mixer with h.f. feedback agrees with theory, but the effect was small because of the low conversion transconductance of the device. Author
- Electrical and Electronic Equipment