AVALANCHE MODE PHOTODIODES FOR HETERODYNE TECHNIQUES AT 1.06 MICRONS.
Interim rept. no. 3, Oct 66-Jan 67,
SPERRY RAND RESEARCH CENTER SUDBURY MA
Pagination or Media Count:
The report describes the development of techniques leading towards realization of a 1 GHz bandwidth photodiode sensitive to 1.06 microns radiation. The improved diffusion and silicon nitride deposition techniques which yield high-quality passivated planar junctions in germanium are described. Of specific importance for the achievement of passivated junctions is the deposition of a virgin nitride layer after the diffusions are complete. Microplasma breakdowns have limited devices to low avalanche gain. Author
- Electrical and Electronic Equipment
- Infrared Detection and Detectors