Accession Number:

AD0808872

Title:

AVALANCHE MODE PHOTODIODES FOR HETERODYNE TECHNIQUES AT 1.06 MICRONS.

Descriptive Note:

Interim rept. no. 3, Oct 66-Jan 67,

Corporate Author:

SPERRY RAND RESEARCH CENTER SUDBURY MA

Personal Author(s):

Report Date:

1967-01-01

Pagination or Media Count:

16.0

Abstract:

The report describes the development of techniques leading towards realization of a 1 GHz bandwidth photodiode sensitive to 1.06 microns radiation. The improved diffusion and silicon nitride deposition techniques which yield high-quality passivated planar junctions in germanium are described. Of specific importance for the achievement of passivated junctions is the deposition of a virgin nitride layer after the diffusions are complete. Microplasma breakdowns have limited devices to low avalanche gain. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Infrared Detection and Detectors

Distribution Statement:

APPROVED FOR PUBLIC RELEASE