AVALANCHE MODE PHOTODIODES FOR HETERODYNE TECHNIQUES AT 1.06 MICRONS.
Quarterly rept. no. 2,
SPERRY RAND RESEARCH CENTER SUDBURY MA
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The report describes the development of techniques leading toward realization of a 1 GHz bandwidth photodiode sensitive to 1.06 micron radiation. Two types of avalanche-mode photodiodes capable of internal signal gain were developed for this purpose. For the first device type, a planar diode produced by the nitride technique, poor passivation resulted in soft diodes. Investigations show that surface preparation does not improve passivation, but that improper wafer chemical treatment can produce an unsuitable silicon-nitride diffusion mask. Improved electropolishing techniques resulted in smoother germanium wafer surfaces, which may produce harder planar diodes. A second device design was completed for volcano mesa diodes. Techniques for producing these volcano diodes were developed. It is believed that the primary development effort should be concentrated on volcano diodes, with the development of silicon-nitride planar diodes considered desirable, but not essential. Although volcano diode development appears more promising, the volcano diodes may present greater packaging problems.
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