Accession Number:

AD0808332

Title:

UKRAINIAN JOURNAL OF PHYSICS (SELECTED ARTICLES).

Descriptive Note:

Edited translation,

Corporate Author:

FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OH

Report Date:

1966-12-05

Pagination or Media Count:

17.0

Abstract:

A theoretical explanation of the field effect in nonequilibrium depletion of a silicon semiconductor by majority carriers is given. The changes in the space charge, electric field, conductivity, and capacitance of the semiconductor are calculated as functions of the voltage drop across the semiconductor in the non-equilibrium mode. It is shown that the calculated value of the depth of penetration of the field at the instant of blocking the current coincides with the thickness of the silicon plate. The results of a study of some of the characteristics of Q-switched ruby lasers with prism shutters, which play an important role in the generation of giant light pulses, are presented. An experiment is conducted on the effect of the misalignment angle of the mirrors on the threshold pumping power for various parameters of the optical cavity static characteristics and the dependence of laser beam intensity on these parameters dynamic characteristics. Author

Subject Categories:

  • Lasers and Masers
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE