Accession Number:

AD0808264

Title:

TRANSISTOR, VHF, SILICON, POWER (SPECIAL PURPOSE) 50 W, 76 MHZ.

Descriptive Note:

Technical rept. 1 May-31 Jul 66,

Corporate Author:

TRW SEMICONDUCTORS LAWNDALE CA

Personal Author(s):

Report Date:

1967-01-01

Pagination or Media Count:

53.0

Abstract:

This report covers the work performed during the first half of the 50 W, 76 MHz Program. Transistors capable of delivering 50 watts at 76 MHz with a collector base breakdown voltage of greater than 100 volts of 10 mA have been successfully fabricated by using deep diffusions. Typical state of the art devices are capable of delivering 50 watts at 76 MHz with 9.5 dB power gain and 75 collector efficiency. In single sideband operation, they deliver 40 watts PEP with -30 dB intermodulation distortion and 11 dB of gain with 43 collector efficiency. Infrared microscope techniques have been used to evaluate the effectiveness of the stabilizing resistors by measuring the temperature of the emitters at each cell. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE