MICROWAVE OSCILLATIONS IN BULK SEMICONDUCTORS
Quarterly progress rept. no. 5, 1 Jul-30 Sep 1966
IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY
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Experiments designed to further explore the properties of heat treated boat grown n-type GaAs are described. Doping with radioactive Zn has made possible the determination of the deep donor concentration, yielding a value of 4 x 10 to the 16th power cm to the -3rd power. Material for bulk effect devices is also being obtained by solution regrowth and vapor growth. Efforts to batch fabricate Gunn oscillators with reproducible device characteristics have been disappointing, the source of the problem not yet identified. Experiments designed to measure the drift velocity vs. field in GaAs are underway.
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