Accession Number:

AD0805407

Title:

ION IMPLANTATION JUNCTION TECHNIQUES.

Descriptive Note:

Quarterly technical progress rept. no. 3, 1 Aug-31 Oct 66,

Corporate Author:

ION PHYSICS CORP BURLINGTON MA

Personal Author(s):

• King, Q. J.
• Burrill, J. T.
• Smith, D.
• Harrison, S.
• Solomon, S. J.

Report Date:

1966-10-31

Pagination or Media Count:

42.0

Abstract:

The program is primarily directed at the fabrication of high power-to-weight ratio cells with integral coverslips. During this quarter investigations were concentrated on conventional silicon material cells. At a nominal thickness of 8 mils without coverslip, efficiencies as high as 10.3 AMO and PW ratios of 121 wattslb have been achieved. At 5 mils, the respective numbers are 9.5 and 181 wattslb. Eight mil cells with 1.5 integral coverslips were made with efficiencies of 12.3 tungsten - 2800 K and PW ratios of 130 wattslb tungsten.

Descriptors:

• (*SOLAR CELLS
• SILICON)
• MANUFACTURING
• POWER
• WEIGHT
• COSTS
• FILMS
• THICKNESS

Subject Categories:

• Electric Power Production and Distribution

Distribution Statement:

APPROVED FOR PUBLIC RELEASE