ION IMPLANTATION JUNCTION TECHNIQUES.
Quarterly technical progress rept. no. 3, 1 Aug-31 Oct 66,
ION PHYSICS CORP BURLINGTON MA
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The program is primarily directed at the fabrication of high power-to-weight ratio cells with integral coverslips. During this quarter investigations were concentrated on conventional silicon material cells. At a nominal thickness of 8 mils without coverslip, efficiencies as high as 10.3 AMO and PW ratios of 121 wattslb have been achieved. At 5 mils, the respective numbers are 9.5 and 181 wattslb. Eight mil cells with 1.5 integral coverslips were made with efficiencies of 12.3 tungsten - 2800 K and PW ratios of 130 wattslb tungsten.
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