TRANSISTOR, VHF, SILICON, POWER, LINEAR, 30-MHZ, 100 WATTS PEP.
Final rept. 1 Jun 65-30 Jun 66,
RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES
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This report describes the work performed in the development and fabrication of a linear amplifier transistor with a goal of 100 watts PEP at 30 megahertz with -30 dB intermodulation distortion, 15-dB power gain, and efficiency greater than 35 percent. The transistor structure incorporates diffused ballast resistance for second-breakdown protection. A temperature-compensating diode has been placed inside the transistor package to provide Class AB bias-point control. The package is a uniquely designed stud package having short, flat, low inductance, isolated terminals. There are four isolated terminals three terminals for the transistor and one terminal for the diode. The pellet is sealed by encapsulation in a silicon resin. Performance data on the submitted final samples reveals that 20 percent of the transistors were capable of attaining the major goal of 100 watts PEP with -30 dB intermodulation distortion. Median power gain on sample transistors was 14 dB and collector differences were near 50 percent. The device was capable of 150 watts dissipation at room temperature. Author
- Electrical and Electronic Equipment