Accession Number:

AD0802516

Title:

HIGH-INFORMATION-DENSITY STORAGE SURFACES.

Descriptive Note:

Quarterly rept. no. 5, 1 Apr-30 Jun 66,

Corporate Author:

STANFORD RESEARCH INST MENLO PARK CA

Personal Author(s):

Report Date:

1966-10-01

Pagination or Media Count:

39.0

Abstract:

This report discusses contrast measurements taken with an unbakeable field-emitter scanning electron microscope on targets consisting of metal-dielectric-metal film sandwiches on substrates, with small holes through the first two layers. Synchronous lock-in amplification is shown to override stray electron noise, permitting the detection of target holes. Variations of secondary electron contrast with sandwich potential and electron multiplier bias are presented. Effects of electron polymerization contamination, ambient ac magnetic fields, and stray electron noise on the performance of this instrument are described. The conversion of a small, relatively inexpensive commercial electron microscope into an electron probe, for use in producing regular arrays of storage elements, is described, and the first results on resist exposure and development are presented. Related work on molybdenum etching with mixtures of O2 and HC1, and on bombardment-induced-conductivity measurements are discussed briefly. Author

Subject Categories:

  • Computer Hardware

Distribution Statement:

APPROVED FOR PUBLIC RELEASE